The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Oct. 03, 2013
Applicant:

Hgst Netherlands B.v., Amsterdam, NL;

Inventors:

Matthew Joseph Carey, San Jose, CA (US);

Jeffrey Robinson Childress, San Jose, CA (US);

Young-suk Choi, Los Gatos, CA (US);

Goran Mihajlovic, San Jose, CA (US);

John Creighton Read, San Jose, CA (US);

Neil Smith, San Jose, CA (US);

Assignee:

HGST NETHERLANDS B.V., Amsterdam, NL;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01); C23C 28/02 (2006.01); G01R 33/00 (2006.01); G01R 33/09 (2006.01); C23C 14/16 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
G11B 5/3912 (2013.01); C23C 14/165 (2013.01); C23C 28/021 (2013.01); G01R 33/00 (2013.01); G01R 33/093 (2013.01); G01R 33/098 (2013.01); B82Y 10/00 (2013.01); G11B 2005/3996 (2013.01); Y10S 977/943 (2013.01);
Abstract

A disk drive includes a disk including a magnetizable layer of material, and a transducer. The transducer has a read element that includes a first shield layer, a pinned layer, a metallic spacer, an AP (anti-parallel) free layer, and a second shield layer. The pinned layer has a surface area which is greater than the area of the AP free layer. The read element also includes an anti-ferromagnetic layer for substantially fixing the magnetic orientation of a plurality of domains in the pinned layer. The ferromagnetic layer is adjacent the pinned layer. The pinned layer, and the anti-ferromagnetic layer both have surface areas which are greater than the area associated with the AP free layer. The anti-ferromagnetic layer, in one embodiment, has a pinning strength in the range of 0.5 erg/cmto 1.5 erg/cm.


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