The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

May. 15, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

David L. Harame, Essex Junction, VT (US);

Stephen E. Luce, Underhill, VT (US);

Anthony K. Stamper, Williston, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. 2 LLC, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/76 (2006.01); H01L 41/083 (2006.01); H01L 41/08 (2006.01);
U.S. Cl.
CPC ...
H01L 41/083 (2013.01); H01L 41/081 (2013.01);
Abstract

Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, are provided. The structure includes a single crystalline beam formed from a silicon layer of a silicon on insulator (SOI) substrate; insulator material coating the single crystalline beam; an upper cavity formed above the single crystalline beam, over a portion of the insulator material; a lower cavity formed in lower wafer bonded to an insulator layer of the SOI substrate, below the single crystalline beam and the insulator layer of the SOI substrate; a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material; and a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) in electrical connection with the single crystalline beam.


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