The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Dec. 06, 2010
Applicants:

Seng Guan Chow, Singapore, SG;

Lee Sun Lim, Singapore, SG;

Rui Huang, Singapore, SG;

Xusheng Bao, Singapore, SG;

MA Phoo Pwint Hlaing, Singapore, SG;

Inventors:

Seng Guan Chow, Singapore, SG;

Lee Sun Lim, Singapore, SG;

Rui Huang, Singapore, SG;

Xusheng Bao, Singapore, SG;

Ma Phoo Pwint Hlaing, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 21/561 (2013.01); H01L 23/3128 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/24137 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/18162 (2013.01);
Abstract

A semiconductor device has a plurality of semiconductor die mounted active surface to a carrier. An encapsulant is deposited over semiconductor die and carrier. Openings are formed through a surface of the encapsulant to divide the encapsulant into discontinuous segments. The openings have straight or beveled sidewalls. The openings can be formed partially through the surface of the encapsulant in an area between the semiconductor die. The openings can be formed partially through the surface of the encapsulant over the semiconductor die. The openings can be formed through the encapsulant in an area between the semiconductor die. A portion of the surface of the encapsulant is removed down to a bottom of the openings. The carrier is removed. An interconnect structure is formed over the encapsulant and the semiconductor die. The encapsulant is cured prior to or after forming the openings.


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