The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Jul. 11, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Kuo-Pin Chang, Yuanli Township, TW;

Wen-Wei Yeh, Bade, TW;

Chih-Shen Chang, New Taipei, TW;

Hang-Ting Lue, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/3427 (2013.01);
Abstract

A memory device is described that includes a three-dimensional array of memory cells having a plurality of levels of memory cells accessed by a plurality of word lines, and a plurality of bit lines. Control circuitry is coupled to the plurality of word lines and the plurality of bit lines. The control circuitry is adapted for programming a selected memory cell in a selected level of the array and on a selected word line, by hot carrier generation assisted FN tunneling, while inhibiting disturb in unselected memory cells in unselected levels and in the selected level and on unselected word lines by self-boosting.


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