The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Jan. 16, 2013
Applicant:
Mitsui Chemicals, Inc., Minato-ku, JP;
Inventors:
Shoko Ono, Ichihara, JP;
Yasuhisa Kayaba, Sodegaura, JP;
Hirofumi Tanaka, Sodegaura, JP;
Kazuo Kohmura, Iwakuni, JP;
Tsuneji Suzuki, Chiba, JP;
Shigeru Mio, Chiba, JP;
Assignee:
MITSUI CHEMICALS, INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G 73/02 (2006.01); H01L 23/29 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 21/56 (2006.01); C09J 179/02 (2006.01); C09K 3/10 (2006.01);
U.S. Cl.
CPC ...
C08G 73/0206 (2013.01); C08G 73/0213 (2013.01); C08G 73/0226 (2013.01); C09J 179/02 (2013.01); C09K 3/1006 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/02282 (2013.01); H01L 21/02304 (2013.01); H01L 21/02362 (2013.01); H01L 21/56 (2013.01); H01L 23/293 (2013.01); H01L 23/5329 (2013.01); C08G 2190/00 (2013.01); C09K 2003/1087 (2013.01); H01L 2924/0002 (2013.01); Y10T 428/2982 (2015.01);
Abstract
In the invention, a sealing composition for a semiconductor is provided which includes a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 2,000 to 1,000,000, and that has a branching degree of 48% or more, wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis.