The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Aug. 06, 2012
Applicants:
Fumimasa Horikiri, Nagareyama, JP;
Kenji Shibata, Tsukuba, JP;
Kazufumi Suenaga, Tsuchiura, JP;
Kazutoshi Watanabe, Tsuchiura, JP;
Akira Nomoto, Kasumigaura, JP;
Inventors:
Fumimasa Horikiri, Nagareyama, JP;
Kenji Shibata, Tsukuba, JP;
Kazufumi Suenaga, Tsuchiura, JP;
Kazutoshi Watanabe, Tsuchiura, JP;
Akira Nomoto, Kasumigaura, JP;
Assignee:
Sciocs Company Limited, Hitachi-shi, Ibaraki-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/332 (2013.01); H01L 41/08 (2006.01); H01L 41/047 (2006.01); H01G 5/18 (2006.01); H01L 41/09 (2006.01); H01L 41/187 (2006.01);
U.S. Cl.
CPC ...
H01L 41/332 (2013.01); H01G 5/18 (2013.01); H01L 41/047 (2013.01); H01L 41/0805 (2013.01); H01L 41/094 (2013.01); H01L 41/1873 (2013.01);
Abstract
A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (KNa)NbOon a substrate, and dry-etching the piezoelectric film by using a low-pressure plasma including a fluorine system reactive gas.