The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Mar. 21, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Owen R. Fay, Meridian, ID (US);

Warren M. Farnworth, Nampa, ID (US);

David R. Hembree, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 21/48 (2006.01); H01L 21/44 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03444 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/114 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/1161 (2013.01); H01L 2224/1162 (2013.01); H01L 2224/1182 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11474 (2013.01); H01L 2224/11823 (2013.01); H01L 2224/11825 (2013.01); H01L 2224/11826 (2013.01); H01L 2224/11831 (2013.01); H01L 2224/11903 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13075 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13562 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13687 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/29011 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73103 (2013.01); H01L 2224/81139 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81205 (2013.01); H01L 2224/81345 (2013.01); H01L 2224/81365 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81898 (2013.01); H01L 2224/831 (2013.01); H01L 2224/83141 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06555 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15311 (2013.01);
Abstract

Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods are disclosed. A system in accordance with a particular embodiment includes a first semiconductor substrate having a first substrate material, and a penetrating structure carried by the first semiconductor substrate. The system further includes a second semiconductor substrate having a second substrate material with a preformed recess. The penetrating structure of the first semiconductor substrate is received in the recess of the second semiconductor substrate and is mechanically engaged with the recess and secured to the second semiconductor substrate.


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