The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 05, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chin-Shen Lin, Taipei, TW;
Jerry Chang-Jui Kao, Taipei, TW;
Nitesh Katta, Hsinchu, TW;
Chou-Kun Lin, Hsin-Chu, TW;
Yi-Chuin Tsai, Pingtung Country, TW;
Chi-Yeh Yu, Hsinchu, TW;
Kuo-Nan Yang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method is disclosed that includes the operations outlined below. A first criteria is determined to be met when directions of a first current and a second current around a first end and a second end of a metal segment respectively are opposite, in which the metal segment is a part of a power rail in at least one design file of a semiconductor device and is enclosed by only two terminal via arrays. A second criteria is determined to be met when a length of the metal segment is not larger than a electromigration critical length. The metal segment is included in the semiconductor device with a first current density limit depending on the length of the metal segment when the first and the second criteria are met.