The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Mar. 23, 2012
Eiichi Nishimura, Kurokawa-gun, JP;
Masato Kushibiki, Kurokawa-gun, JP;
Fumiko Yamashita, Kurokawa-gun, JP;
Eiichi Nishimura, Kurokawa-gun, JP;
Masato Kushibiki, Kurokawa-gun, JP;
Fumiko Yamashita, Kurokawa-gun, JP;
TOKYO ELECTRON LIMITED, , JP;
Abstract
Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a CFgas and a methane gas. Subsequently, a reactive product generated by the etching and deposited on an inner surface of the hole of the oxide film is ashed with plasma generated from a processing gas containing an oxygen gas, and the etching and the ashing processes are repeated in sequence.