The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Apr. 23, 2014
Applicant:
Sen Corporation, Shinagawa-ku, Tokyo, JP;
Inventors:
Assignee:
SEN CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/26 (2014.01); H01L 21/265 (2006.01); C23C 14/48 (2006.01); C23C 14/54 (2006.01); H01J 37/302 (2006.01); H01J 37/317 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); C23C 14/48 (2013.01); C23C 14/542 (2013.01); H01J 37/3007 (2013.01); H01J 37/3023 (2013.01); H01J 37/3171 (2013.01); H01J 37/3172 (2013.01); H01J 2237/30483 (2013.01);
Abstract
An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.