The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 07, 2012
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Masaki Inoue, Albany, NY (US);
Kazuhisa Ishii, Miyagi, JP;
Motoki Noro, Hsin-chu, TW;
Shinji Kawada, Hsin-chu, TW;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01J 37/32192 (2013.01); H01J 37/32366 (2013.01); H01L 21/02167 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 29/66795 (2013.01);
Abstract
A plasma treatment device includes a dielectric window containing SiO. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which contains no oxygen gas and contains CHF, etc, is used to deposit a protective film. In a second plasma treatment step, a processing gas which contains oxygen gas and contains CHF, etc. is used to etch away the top and other portions of a part having a convex cross-sectional shape.