The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Apr. 24, 2013
Applicant:
Spts Technologies Limited, Newport, GB;
Inventors:
Kathrine Crook, South Gloucestershire, GB;
Andrew Price, Gwent, GB;
Mark Carruthers, Gwent, GB;
Daniel Archard, Glamorgan, GB;
Stephen Burgess, Gwent, GB;
Assignee:
SPTS TECHNOLOGIES LIMITED, Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/402 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01L 21/0234 (2013.01); H01L 21/02164 (2013.01);
Abstract
A method of forming silicon dioxide films using plasma enhanced chemical vapor deposition (PECVD) uses tetraethyl orthosilicate (TEOS), oxygen or a source of oxygen, and hydrogen as precursors. The method can be carried out at low temperatures in a range of 125 to 175° C. which is useful for manufacturing wafers with through silicon vias.