The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Aug. 20, 2014
Sandisk Technologies Inc., Plano, TX (US);
Raghuveer S. Makala, Campbell, CA (US);
Yanli Zhang, San Jose, CA (US);
Yao-Sheng Lee, Tampa, FL (US);
Senaka Krishna Kanakamedala, San Jose, CA (US);
Rahul Sharangpani, Fremont, CA (US);
George Matamis, Danville, CA (US);
Johann Alsmeier, San Jose, CA (US);
Seiji Shimabukuro, Yokkaichi, JP;
Genta Mizuno, Yokkaichi, JP;
Naoki Takeguchi, Yokkaichi, JP;
SANDISK TECHNOLOGIES INC., Plano, TX (US);
Abstract
A monolithic three dimensional NAND string includes a semiconductor channel, with at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, and a plurality of copper containing control gate electrodes extending substantially parallel to the major surface of the substrate. The plurality of control gate electrodes include at least a first control gate electrode located in a first device level and a second control gate electrode located in a second device level located over the major surface of the substrate and below the first device level. The NAND string also includes a blocking dielectric located over the plurality of control gates, a tunnel dielectric in contact with the semiconductor channel, and at least one charge storage region located between the blocking dielectric and the tunnel dielectric.