The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Feb. 14, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Chun-Yu Lin, Hsinchu, TW;
Feng-Yuan Chiu, Hsinchu County, TW;
Bing-Syun Yeh, Hsinchu, TW;
Yi-Jie Chen, Hsinchu, TW;
Ying-Chou Cheng, Hsinchu County, TW;
I-Chang Shih, Hsinchu County, TW;
Ru-Gun Liu, Hsinchu County, TW;
Shih-Ming Chang, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
According to an exemplary embodiment, a method of forming a substrate pattern having an isolated region and a dense region is provided. The method includes the following operations: forming a first photoresist layer over the substrate; exposing the first photoresist layer through a first mask corresponding to the isolated region; developing the first photoresist layer to form a first pattern; forming a second photoresist layer over the substrate and the first pattern; exposing the second photoresist layer through a second mask corresponding to the substrate pattern; developing the second photoresist layer to form a second pattern; and etching the first pattern and the substrate to form the substrate pattern in the isolated region and the dense region.