The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 03, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of shielding through silicon vias (TSVs) in a passive interposer includes doping a substrate with positive ions, and implanting positive ions in an upper portion of the substrate, such that the substrate has at least a p-doped portion and a heavily p-doped upper portion. The method further includes forming an interlayer dielectric (ILD) above the heavily p-doped upper portion. The method further includes forming a plurality of through silicon vias (TSVs) through the ILD and the substrate, such that the passive interposer is configured to electrically couple at least one structure above and below the passive interposer. The method further includes forming, between pairs of TSVs of the plurality of TSVs, a plurality of shielding lines through the interlayer dielectric, the shielding lines configured to electrically couple the heavily p-doped upper portion of the substrate and at least one interconnect structure above the ILD.