The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Apr. 25, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Errol Antonio C. Sanchez, Tracy, CA (US);

Xinyu Bao, Mountain View, CA (US);

Wonseok Lee, Pleasanton, CA (US);

David Keith Carlson, San Jose, CA (US);

Zhiyuan Ye, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02546 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02463 (2013.01); H01L 21/02502 (2013.01); H01L 21/02639 (2013.01); H01L 21/762 (2013.01);
Abstract

Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A <111> surface may be formed on a substrate and a Group III-V material may be grown from the <111> surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure.


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