The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
May. 13, 2013
Shin-etsu Chemical Co., Ltd., Chiyoda-ku, JP;
SHIN-ETSU CHEMICAL CO., LTD., Chiyoda-ku, JP;
Abstract
A half-tone phase shift filmand a light-shielding filmare stacked on transparent substrate. The light-shielding filmhas a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The half-tone phase shift filmis made of a molybdenum silicon nitride oxide. The layer made of a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry-etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision. The present invention provides a novel technique that can increase a dry-etching rate of a light-shielding film made of a chromium-containing material while assuring various characteristics required for the light-shielding film.