The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Feb. 25, 2010
Shih-yu Wang, Taipei, TW;
Chia-ling LU, Taipei, TW;
Yan-yu Chen, Taipei, TW;
Yu-lien Liu, Hsinchu, TW;
Tao-cheng LU, Kaohsiung, TW;
Shih-Yu Wang, Taipei, TW;
Chia-Ling Lu, Taipei, TW;
Yan-Yu Chen, Taipei, TW;
Yu-Lien Liu, Hsinchu, TW;
Tao-Cheng Lu, Kaohsiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
An electrostatic discharge tolerant device includes a semiconductor body having a first conductivity type, and a pad. A surrounding well having a second conductivity type is laid out in a ring to surround an area for an electrostatic discharge circuit in the semiconductor body. The surrounding well is relatively deep, and in addition to defining the area for the electrostatic discharge circuit, provides the first terminal of a diode formed with the semiconductor body. Within the area surrounded by the surrounding well, a diode coupled to the pad and a transistor coupled to the voltage reference are connected in series and form a parasitic device in the semiconductor body.