The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jan. 21, 2015
Bruce M. Green, Gilbert, AZ (US);
Darrell G. Hill, Chandler, AZ (US);
Jenn Hwa Huang, Chandler, AZ (US);
Karen E. Moore, Phoenix, AZ (US);
Bruce M. Green, Gilbert, AZ (US);
Darrell G. Hill, Chandler, AZ (US);
Jenn Hwa Huang, Chandler, AZ (US);
Karen E. Moore, Phoenix, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel.