The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jun. 19, 2013
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Ying Zhang, Santa Clara, CA (US);
Steven Sherman, Newton, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A replacement metal gate transistor and methods of forming replacement metal gate transistors are described. Various examples provide methods of manufacturing a replacement metal gate transistor that includes depositing a dielectric layer into a trench, wherein the dielectric layer is deposited onto the bottom of the trench and the sidewalls of the trench, depositing a first metal layer into the trench, wherein the first metal layer is deposited onto the bottom of the trench and the sidewalls of the trench over the dielectric layer, depositing a second metal layer into the trench, wherein the second metal layer is deposited onto the bottom of the trench and the sidewalls of the trench over the first metal layer, removing at least a portion of the second metal layer from the sidewalls of the trench, and depositing a conducting layer into the trench. Other embodiments are disclosed and claimed.