The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
May. 01, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chin-Shen Lin, Taipei, TW;
Jerry Chang-Jui Kao, Taipei, TW;
Nitesh Katta, Hsinchu, TW;
Chou-Kun Lin, Hsin-Chu, TW;
Yi-Chuin Tsai, Sing-Yuan, TW;
Chien-Ju Chao, New Taipei, TW;
Kuo-Nan Yang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method is disclosed that includes the operations outlined below. An effective current pulse width of a maximum peak is determined based on a waveform function of a current having multiple peaks within a waveform period in a metal segment of a metal line in at least one design file of a semiconductor device to compute a duty ratio between the effective current pulse width and the waveform period. A maximum direct current limit of the metal segment is determined according to physical characteristics of the metal segment. An alternating current electromigration (AC EM) current limit is determined according to a ratio between the maximum direct current limit and a function of the duty ratio. The metal segment is included with the physical characteristics in the at least one design file when the maximum peak of the current does not exceed the AC EM current limit.