The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Mar. 04, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Eiichi Nishimura, Miyagi, JP;

Fumiko Yamashita, Miyagi, JP;

Koyumi Sasa, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); C23F 4/00 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H05K 3/02 (2006.01);
U.S. Cl.
CPC ...
C23F 4/00 (2013.01); H01L 21/02071 (2013.01); H01L 21/32136 (2013.01); H05K 3/027 (2013.01); H05K 2203/087 (2013.01); H05K 2203/092 (2013.01); H05K 2203/095 (2013.01); H05K 2203/1388 (2013.01); H05K 2203/1484 (2013.01); H05K 2203/1492 (2013.01); H05K 2203/1509 (2013.01);
Abstract

In a method of etching a metal layer of an object to be processed, the metal layer is etched by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object. The object is exposed to an oxygen plasma after etching the metal layer. The object is exposed to hexafluoroacetylacetone after exposing the object to the oxygen plasma.


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