The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Feb. 04, 2015
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Tony P. Chiang, Campbell, CA (US);
Chi-I Lang, Cupertino, CA (US);
Prashant B. Phatak, San Jose, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); H01L 27/2463 (2013.01); H01L 45/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/14 (2013.01); H01L 45/148 (2013.01); H01L 45/149 (2013.01); H01L 45/1616 (2013.01); H01L 45/1641 (2013.01); H01L 27/2409 (2013.01);
Abstract
A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.