The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Jan. 19, 2012
Ruilong Xie, Albany, NY (US);
Mark Raymond, Schenectady, NY (US);
Robert Miller, Yorktown Heights, NY (US);
Ruilong Xie, Albany, NY (US);
Mark Raymond, Schenectady, NY (US);
Robert Miller, Yorktown Heights, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Disclosed herein are various FinFET semiconductor devices with improved source/drain resistance and various methods of making such devices. One illustrative device disclosed herein includes a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches at least partially define a fin for the device, an etch stop layer positioned above a bottom surface of each of the trenches, and a metal silicide region formed on all exposed surfaces of the fin that are positioned above an upper surface of the etch stop layer.