The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Dec. 23, 2014
Applicant:

Icemos Technology Ltd., Belfast, GB;

Inventors:

Samuel Anderson, Tempe, AZ (US);

Takeshi Ishiguro, Fukushima-ken, JP;

Assignee:

Icemos Technology Ltd, Belfast, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/73 (2006.01); H01L 29/737 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 21/265 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66734 (2013.01); H01L 29/0634 (2013.01); H01L 29/0856 (2013.01); H01L 29/1095 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/42364 (2013.01); H01L 29/42372 (2013.01); H01L 29/66727 (2013.01); H01L 29/7813 (2013.01); H01L 21/26586 (2013.01); H01L 29/0653 (2013.01); H01L 29/4236 (2013.01); H01L 29/495 (2013.01); H01L 29/4975 (2013.01); H01L 29/7308 (2013.01); H01L 29/7371 (2013.01); H01L 29/7393 (2013.01); H01L 29/74 (2013.01); H01L 29/861 (2013.01);
Abstract

Superjunction semiconductor devices having narrow surface layout of terminal structures and methods of manufacturing the devices are provided. The narrow surface layout of terminal structures is achieved, in part, by connecting a source electrode to a body contact region within a semiconductor substrate at a body contact interface comprising at least a first side of the body contact region other than a portion of a first main surface of the semiconductor substrate.


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