High electron mobility transistor including plurality of gate electrodes

Abstract

According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.