The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Apr. 03, 2014
Tokyo Electron Limited, Tokyo, JP;
Shunichi Mikami, Miyagi, JP;
Tokyo Electron Limited, , JP;
Abstract
A plasma processing method includes an etching process of etching an insulating film formed on a processing target object in a chamber by plasma of a first fluorine-containing gas with a TiN film having a preset pattern as a mask; a modifying process of modifying, between a carbon-containing film and a Ti-containing film adhering to a component within the chamber, a surface of the Ti-containing film by plasma of an oxygen-containing gas while removing the carbon-containing film by the plasma of the oxygen-containing gas, after the etching process; a first removing process of removing a TiO film, which is obtained by modifying the surface of the Ti-containing film, by plasma of a second fluorine-containing gas; and a second removing process of removing a residual film of the Ti-containing film, which is exposed by removing the TiO film, from the component within the chamber by plasma of a chlorine-containing gas.