The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Jan. 10, 2014
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Pratyush Kamal, San Diego, CA (US);

Yang Du, Carlsbad, CA (US);

Kambiz Samadi, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 5/02 (2006.01); H04L 12/933 (2013.01); H01L 23/00 (2006.01); G06F 1/32 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
G11C 5/02 (2013.01); G06F 1/3225 (2013.01); G06F 1/3275 (2013.01); H01L 24/89 (2013.01); H01L 27/0688 (2013.01); H04L 49/101 (2013.01); H04L 49/109 (2013.01); H01L 2924/1434 (2013.01);
Abstract

Monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) with vertical memory components are disclosed. A 3D memory crossbar architecture with tight-pitched vertical monolithic intertier vias (MIVs) for inter-block routing and multiplexers at each tier for block access is used to shorten overall conductor length and reduce resistive-capacitive (RC) delay. Elimination of such long crossbars reduces the RC delay of the crossbar and generally improves performance and speed. Further, elimination of the long horizontal crossbars makes conductor routing easier. The MIVs, with their small run-length, can work without the need for repeaters (unlike the long crossbars), and control logic may be used to configure the memory banks based on use.


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