The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Aug. 19, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Shou-Shu Lu, Kaohsiung, TW;
Hsun-Ying Huang, Tainan, TW;
I-Chang Lin, Tainan, TW;
Chia-Chi Hsiao, Changhua County, TW;
Yung-Cheng Chang, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 27/146 (2006.01); H01L 31/18 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01); H01L 27/14698 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract
A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.