The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Mar. 11, 2015
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Ferruccio Frisina, S. Agata Li Battiati, IT;

Angelo Magri′, Belpasso, IT;

Mario Giuseppe Saggio, Aci Bonaccorsi, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza (MB), IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 29/0619 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/66431 (2013.01);
Abstract

An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first epitaxial region made of a second semiconductor material, which overlies the substrate and defines a first surface; a second epitaxial region made of a third semiconductor material, which overlies the first surface and is in contact with the first epitaxial region, the third semiconductor material having a bandgap narrower than the bandgap of the second semiconductor material; an active area, extending within the second epitaxial region and housing at least one elementary electronic component; and an edge structure, arranged between the active area and the lateral surface, and including a dielectric region arranged laterally with respect to the second epitaxial region, which overlies the first surface and is in contact with the first epitaxial region.


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