The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jun. 17, 2014
Globalfoundries Inc., Grand Cayman, KY (US);
Xusheng Wu, Ballston Lake, NY (US);
Xiaodong Yang, Hopewell Junction, NY (US);
Yanxiang Liu, Glenville, NY (US);
Jin Ping Liu, Ballston Lake, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A non-planar transistor is fabricated with dummy or sacrificial epitaxy and a structure for subsequent replacement or final epitaxy containment is created around the sacrificial epitaxy. The dummy epitaxy is then removed and replaced with the replacement epitaxy. The containment structure allows for uniform growth of the replacement epitaxy and prevents merger. Where n-type and p-type structures are present, the replacement epitaxy process is performed for each type, while protecting the other type with a mask. Optionally, one of the replacement epitaxies, i.e., the one for n-type or p-type, may be used as the dummy epitaxy, resulting in the need for only one mask.