The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jul. 31, 2014
Micron Technology, Inc., Boise, ID (US);
Mamoru Nishizaki, Chuo-ku, JP;
Micron Technology, Inc., Boise, ID (US);
Abstract
A device includes a first transistor including a first gate electrode including first and second parallel electrode portions each extending in a first direction, and a first connecting electrode portion extending in a second direction approximately orthogonal to the first direction and connecting one ends of the first and second parallel electrode portions to each other, and first and second diffusion layers separated from each other by a channel region under the first gate electrode, a first output line connected to the first diffusion layer of the first transistor, and a second transistor comprising a second gate electrode extending in the second direction, and the second transistor being configured to use the second diffusion layer of the first transistor as one of two diffusion layers that are separated from each other by a channel region under the second gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile