The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Nov. 30, 2011
Applicants:

Xusheng Bao, Singapore, SG;

MA Phoo Pwint Hlaing, Singapore, SG;

Jian Zuo, Singapore, SG;

Inventors:

Xusheng Bao, Singapore, SG;

Ma Phoo Pwint Hlaing, Singapore, SG;

Jian Zuo, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/485 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/94 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05173 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05613 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/14131 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device has a semiconductor wafer with a plurality of semiconductor die. A first conductive layer is formed over a surface of the wafer. A first insulating layer is formed over the surface of the wafer and first conductive layer. A second conductive layer has first and second segments formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A UBM layer is formed over the second insulating layer and the first segment of the second conductive layer. A first bump is formed over the UBM layer. The first bump is electrically connected to the second segment and electrically isolated from the first segment of the second conductive layer. A second bump is formed over the surface of the wafer and electrically connected to the first segment of the second conductive layer.


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