The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

May. 25, 2012
Applicants:

Bernardo Gallegos, McKinney, TX (US);

Abram Castro, Fort Worth, TX (US);

Inventors:

Bernardo Gallegos, McKinney, TX (US);

Abram Castro, Fort Worth, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3135 (2013.01); H01L 24/05 (2013.01); H01L 24/20 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02319 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03436 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/131 (2013.01);
Abstract

Integrated circuits and methods of fabricating integrated circuits are disclosed herein. One embodiment of an integrated circuit includes a die having a side, wherein a conductive stud extends substantially normal relative to the side. A dielectric layer having a first side and a second side is located proximate the side of the die so that the first side of the dielectric layer is adjacent the side of the die. The conductive stud extends into the first side of the dielectric layer. A first via extends between the conductive stud and the second side of the dielectric layer. A conductive layer having a first side and a second side is located adjacent the second side of the dielectric layer, wherein the first side of the conductive layer is located adjacent the second side of the dielectric layer. At least a portion of the conductive layer is electrically connected to the first via.


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