The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jun. 18, 2010
Jia-lin Lo, Zhongli, TW;
Ke-wei Su, Zhubei, TW;
Min-chie Jeng, Keelung, TW;
Feng-ling Hsiao, Xinying, TW;
Cheng Hsiao, Hsinchu, TW;
Yi-shun Huang, Hsinchu, TW;
Yi-chun Chen, Taipei, TW;
Jia-Lin Lo, Zhongli, TW;
Ke-Wei Su, Zhubei, TW;
Min-Chie Jeng, Keelung, TW;
Feng-Ling Hsiao, Xinying, TW;
Cheng Hsiao, Hsinchu, TW;
Yi-Shun Huang, Hsinchu, TW;
Yi-Chun Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides systems for predicting semiconductor reliability. In an embodiment a method for predicting the semiconductor reliability includes receiving a degradation parameter input of a semiconductor device and using a degradation equation to determine a plurality of bias dependent slope values for degradation over a short time period according to the degradation parameter input. The plurality of slope values include at least two different slope values for degradation over time. The system accumulates the plurality of slope values and projects the accumulated slope values over a long time period to determine a stress effect for the semiconductor device.