The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Sep. 27, 2012
Applicant:

Omron Corporation, Kyoto-shi, Kyoto, JP;

Inventors:

Takeshi Fujiwara, Nara, JP;

Toshiaki Okuno, Shiga, JP;

Katsuyuki Inoue, Kyoto, JP;

Junya Yamamoto, Shiga, JP;

Kenichi Hinuma, Kyoto, JP;

Yoshiki Ashihara, Kyoto, JP;

Takaaki Miyaji, Shiga, JP;

Assignee:

OMRON Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/02 (2006.01); H01L 25/065 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/10 (2006.01); H01L 21/50 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); B81C 1/00269 (2013.01); H01L 21/50 (2013.01); H01L 23/02 (2013.01); H01L 23/10 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 25/065 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); B81C 2203/019 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/06182 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13169 (2013.01); H01L 2224/13173 (2013.01); H01L 2224/13176 (2013.01); H01L 2224/13178 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/1601 (2013.01); H01L 2224/16058 (2013.01); H01L 2224/16502 (2013.01); H01L 2224/16506 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/29171 (2013.01); H01L 2224/3201 (2013.01); H01L 2224/32058 (2013.01); H01L 2224/32502 (2013.01); H01L 2224/32506 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81805 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83805 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/1461 (2013.01);
Abstract

A method for bonding wafers includes forming a first bonding part on a surface of a first wafer by stacking a diffusion preventing layer formed of a material having low wettability with AuSn above the first wafer and forming a bonding layer on a surface of the diffusion preventing layer such that the bonding layer stays back of an edge of the diffusion preventing layer, forming a second bonding part on a surface of a second wafer, and bonding the first bonding part and the second bonding part by eutectic bonding with an AuSn solder under a condition that the first wafer and the second wafer are opposed to each other.


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