The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jun. 08, 2012
Zvi Or-bach, San Jose, CA (US);
Deepak C. Sekar, San Jose, CA (US);
Brian Cronquist, San Jose, CA (US);
Israel Beinglass, Sunnyvale, CA (US);
Ze'ev Wurman, Palo Alto, CA (US);
Paul Lim, Fremont, CA (US);
Zvi Or-Bach, San Jose, CA (US);
Deepak C. Sekar, San Jose, CA (US);
Brian Cronquist, San Jose, CA (US);
Israel Beinglass, Sunnyvale, CA (US);
Ze'ev Wurman, Palo Alto, CA (US);
Paul Lim, Fremont, CA (US);
MONOLITHIC 3D INC., San Jose, CA (US);
Abstract
A 3D semiconductor device, including: a first layer including first transistors; a first interconnection layer interconnecting the first transistors and includes aluminum or copper; a second layer including second transistors; where the second transistors are aligned to the first transistors with a less than 40 nm alignment error, and where the second layer is overlying the first interconnection layer, and where at least one of the second transistors has a back-bias structure designed to modify the performance of at least one of the second transistors.