The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Dec. 26, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Kenji Matsumoto, Nirasaki, JP;
Peng Chang, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); C23C 16/18 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/18 (2013.01); C23C 16/40 (2013.01); H01L 21/67207 (2013.01); H01L 21/76814 (2013.01); H01L 21/76828 (2013.01); H01L 21/76831 (2013.01); H01L 21/76846 (2013.01); H01L 21/76855 (2013.01); H01L 21/76867 (2013.01); H01L 21/76882 (2013.01); H01L 23/53238 (2013.01);
Abstract
A manganese metal film forming method includes: degassing an underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes introducing a gas containing an oxidizing agent to form a partially-oxidized manganese metal film.