Sense operation flags in a memory device

Abstract

Memory devices, methods for programming sense flags, methods for sensing flags, and memory systems are disclosed. In one such memory device, the odd bit lines of a flag memory cell array are connected with a short circuit to a dynamic data cache. The even bit lines of the flag memory cell array are disconnected from the dynamic data cache. When an even page of a main memory cell array is read, the odd flag memory cells, comprising flag data, are read at the same time so that it can be determined whether the odd page of the main memory cell array has been programmed. If the flag data indicates that the odd page has not been programmed, threshold voltage windows can be adjusted to determine the states of the sensed even memory cell page.