The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jan. 30, 2014
Applicants:
Kenny Linh Doan, San Jose, CA (US);
Jong Mun Kim, San Jose, CA (US);
Daisuke Shimizu, Saratoga, CA (US);
Inventors:
Kenny Linh Doan, San Jose, CA (US);
Jong Mun Kim, San Jose, CA (US);
Daisuke Shimizu, Saratoga, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/306 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/314 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31122 (2013.01); H01L 21/02115 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/30621 (2013.01); H01L 21/3146 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01);
Abstract
Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH/N/Oand a flourine-rich source such as, but not limited to, CF, SFor CF.