The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Sep. 18, 2014
Applicant:

Shinko Electric Industries Co., Ltd., Nagano-ken, JP;

Inventor:

Kei Murayama, Nagano, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 24/17 (2013.01); H01L 23/498 (2013.01); H01L 23/538 (2013.01); H01L 2224/16054 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16503 (2013.01); H01L 2224/16507 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01083 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/20104 (2013.01);
Abstract

A semiconductor device is provided with a wiring substrate including a connection pad, a joining member joined with the connection pad, and a semiconductor chip including a connection terminal electrically connected to the connection pad via the joining member. The joining member consists of a first intermetallic compound layer formed at a boundary between the connection pad and the joining member, a second intermetallic compound layer formed at a boundary between the connection terminal and the joining member, a third intermetallic compound layer composed of an intermetallic compound of CuSnor (Cu,Ni)Snand formed between the first intermetallic compound layer and the second intermetallic compound layer, and discrete metal grains, each being composed of a simple substance of Bi, in the third intermetallic compound layer. Surfaces of each of the metal grains are completely covered by the third intermetallic compound layer so that the metal grains do not form a layer.


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