The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Sep. 04, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ming-Feng Shieh, Tainan County, TW;

Chen-Yu Chen, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/76 (2006.01); H01L 21/308 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/28123 (2013.01); H01L 21/3086 (2013.01); H01L 21/76 (2013.01); H01L 21/823431 (2013.01); H01L 29/06 (2013.01); H01L 29/0649 (2013.01); H01L 29/6681 (2013.01);
Abstract

A semiconductor device includes a substrate and a plurality of fin structures. A first fin structure and a second fin structure are spaced at a distance D. A first dummy fin structure is adjacent to the first fin structure, and a second dummy fin structure is adjacent to the second fin structure. The device further includes an isolation layer over the substrate and the first and second dummy fin structures, and surrounding the first and second fin structures. The fin structures are arranged such that a distance Dbetween the first fin structure and the first dummy fin structure is greater than the distance D


Find Patent Forward Citations

Loading…