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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9129823 B1

PDFFull Text
Expired
Date of Patent:
Sep. 08, 2015

Filed:

Apr. 01, 2013

Silicon recess etch and epitaxial deposit for shallow trench isolation (sti)

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Harry-Hak-Lay Chuang, Zhubei, TW;

Bao-Ru Young, Zhubei, TW;

Wei Cheng Wu, Zhubei, TW;

Kong-Pin Chang, Caotun Township, TW;

Chia Ming Liang, Taipei, TW;

Meng-Fang Hsu, Hsinchu, TW;

Ching-Feng Fu, Taichung, TW;

Shih-Ting Hung, Sanchong, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Eschweiler & Associates, LLC

Primary Examiner:

Yosef Gebreyesus

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/66651 (2013.01); H01L 29/7851 (2013.01); H01L 29/7833 (2013.01);
Abstract

The embodiments described provide methods and semiconductor device areas for etching an active area region on a semiconductor body and epitaxially depositing a semiconductor layer overlying the active region. The methods enable the mitigation or elimination of problems encountered in subsequent manufacturing associated with STI divots.

Find Patent Forward Citations

Chuang, Harry-Hak-Lay. (2015). Silicon recess etch and epitaxial deposit for shallow trench isolation (sti) (U.S. Patent No. 9129823). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9129823

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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