The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 10, 2014
Applicants:
Intermolecular Inc., San Jose, CA (US);
Globalfoundries, Inc., Grand Cayman, KY;
Inventors:
Anh Duong, Fremont, CA (US);
Errol Todd Ryan, Clifton Park, NY (US);
Assignees:
Intermolecular, Inc., San Jose, CA (US);
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 23/53238 (2013.01);
Abstract
Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.