The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 07, 2014
United Microelectronics Corp., Hsinchu, TW;
Chin-I Liao, Tainan, TW;
Sheng-Hsu Liu, Changhua County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device is described. A spacer is formed on a sidewall of a fin structure. A portion of the fin structure is removed to form a cavity exposing at least a portion of the inner sidewall of the spacer. An epitaxy process is performed based on the remaining fin structure to form a semiconductor layer that has a shovel-shaped cross section including: a stem portion in the cavity, and a shovel plane portion contiguous with the stem portion. A semiconductor device is also described, which includes the spacer, the remaining fin structure and the semiconductor layer that are mentioned above.