The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Dec. 30, 2010
Chi-ming Chen, Zhubei, TW;
Chung-yi Yu, Hsin-Chu, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Ho-yung David Hwang, Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Chi-Ming Chen, Zhubei, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Ho-Yung David Hwang, Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is a method of fabricating a semiconductor device. The method includes: receiving a silicon wafer that contains oxygen; forming a zone in the silicon wafer, the zone being substantially depleted of oxygen; causing a nucleation process to take place in the silicon wafer to form oxygen nuclei in a region of the silicon wafer outside the zone; and growing the oxygen nuclei into defects. Also provided is an apparatus that includes a silicon wafer. The silicon wafer includes: a first portion that is substantially free of oxygen, the first portion being disposed near a surface of the silicon wafer; and a second portion that contains oxygen; wherein the second portion is at least partially surrounded by the first portion.