The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2015

Filed:

Jun. 10, 2008
Applicants:

Ohhan Kim, Kyunggi-Do, KR;

Seungwon Kim, Kyunggi-Do, KR;

Joungun Park, Kyunggi-do, KR;

Inventors:

OhHan Kim, Kyunggi-Do, KR;

SeungWon Kim, Kyunggi-Do, KR;

JoungUn Park, Kyunggi-do, KR;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/552 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 21/561 (2013.01); H01L 23/29 (2013.01); H01L 23/3128 (2013.01); H01L 23/552 (2013.01); H01L 24/97 (2013.01); H01L 24/48 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/97 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30105 (2013.01);
Abstract

A shielded semiconductor device is made by mounting semiconductor die to a first substrate. An encapsulant is formed over the semiconductor die and first substrate. A dicing channel is formed through the encapsulant between the semiconductor die. A hole is drilled in the first substrate along the dicing channel on each side of the semiconductor die. A shielding layer is formed over the encapsulant and semiconductor die. The hole is lined with the shielding layer. The first substrate is singulated to separate the semiconductor die. The first substrate is mounted to a second substrate. A metal pillar is formed in the opening to electrically connect the shielding layer to a ground plane in the second substrate. The metal pillar includes a hook for a mechanically secure connection to the shielding layer. An interconnect structure is formed on the first substrate to electrically connect the semiconductor die to the second substrate.


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