The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jun. 09, 2011
George D. Papasouliotis, North Andover, MA (US);
Kamal Hadidi, Somerville, MA (US);
Helen L. Maynard, North Reading, MA (US);
Ludovic Godet, Boston, MA (US);
Vikram Singh, North Andover, MA (US);
Timothy J. Miller, Ipswich, MA (US);
Bernard Lindsay, Danvers, MA (US);
George D. Papasouliotis, North Andover, MA (US);
Kamal Hadidi, Somerville, MA (US);
Helen L. Maynard, North Reading, MA (US);
Ludovic Godet, Boston, MA (US);
Vikram Singh, North Andover, MA (US);
Timothy J. Miller, Ipswich, MA (US);
Bernard Lindsay, Danvers, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.