The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Jun. 23, 2010
Atsuko Yamaguchi, Kodaira, JP;
Yoshinori Momonoi, Tachikawa, JP;
Junichi Tanaka, Hachioji, JP;
Hiroki Kawada, Tsuchiura, JP;
Atsuko Yamaguchi, Kodaira, JP;
Yoshinori Momonoi, Tachikawa, JP;
Junichi Tanaka, Hachioji, JP;
Hiroki Kawada, Tsuchiura, JP;
HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;
Abstract
Provided are a semiconductor inspection device and a semiconductor inspection method such that in a specimen image in a single field of view obtained by an electron microscope, it is possible to suppress variations in the edge position measurement error attributable to the materials and structures of the lower layers of measured patterns by a first method, wherein the area in the field of view obtained by electron beam scanning is divided into a plurality of regions on the basis of information regarding the structures and materials of the object to be observed and the electron beam scanning conditions are changed for individual regions (), a second method, wherein, the image processing conditions are changed for individual regions resulting from division of the obtained images, or a third method, wherein the edge detection conditions are changed for individual regions resulting from the division within the edge inspection regions of the obtained images.