The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Oct. 30, 2013
Globalfoundries Inc., Grand Cayman, KY;
Sipeng Gu, Clifton Park, NY (US);
Xiang Hu, Clifton Park, NY (US);
Alok Vaid, Ballston Lake, NY (US);
Lokesh Subramany, Clifton Park, NY (US);
Akshey Sehgal, Malta, NY (US);
GlobalFoundries Inc., Grand Cayman, KY;
Abstract
Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area of the FinFET device. Processing steps include forming a first hardmask over the substrate, forming a photoresist over a portion of the first hardmask in the metrology measurement area of the FinFET device, removing the first hardmask in an area adjacent the metrology measurement area remaining exposed following formation of the photoresist, patterning a set of openings in the substrate to form the set of fins in the FinFET device in the area adjacent the metrology measurement area, depositing an oxide layer over the FinFET device, and planarizing the FinFET device to form the planar metrology pad in the metrology measurement area.